UTD484

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-207.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

25

A

Pulsed Drain Current(Note 1)

80

A

Avalanche Current(Note 1)

15

A

Repetitive avalanche energy L=0.3mH(Note 1)

33

mJ

Power Dissipation

TO-252

DFN-8(3×3)

41

W

TO-252

2.1

DFN-8(3×3)

(Notes 3)

1.9

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Exposed pad is ground and must be soldered to PCB



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

TO-252

55

60

°C/W

DFN-8(3×3)

65

°C/W

Junction-to-Case

TO-252/DFN-8(3×3)

2.3

3

°C/W