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UP2003L-TN3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças UP2003L-TN3-R
Descrição Electrónicos  P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP2003L-TN3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

  UP2003L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UP2003L-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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UP2003
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-202.C
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
-25
V
Gate Source voltage
VGSS
±20
V
Continuous Drain Current
ID
-9
A
Pulsed Drain Current (Note 1)
IDM
-36
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
50
°C/W
Junction-to-Case
θJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID=-250µA
-25
V
Drain Source Leakage Current
IDSS
VDS =-25V, VGS =0V
-1
µA
Gate-Body Leakage Current
IGSS
VDS =0V, VGS =±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250µA
-1.0
-1.5
-3.0
V
On-State Drain Current (Note 2)
ID(ON)
VDS = -5V, VGS = -10V
-50
A
Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS =-4.5V, ID =-7A
25
35
mΩ
VGS =-10V, ID =-9A
15
20
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-15V, VGS =0V, f=1MHz
1610
pF
Output Capacitance
COSS
410
Reverse Transfer Capacitance
CRSS
200
SWITCHING PARAMETERS
(Note 3)
Gate to Source Charge
QG
VDS =-12.5V(BR)DSS, VGS =-10V,
ID =-9 A
17
24
nC
Gate Charge at Threshold
QGS
5
Gate to Drain Charge
QGD
6
Turn-ON Delay Time
tD(ON)
VDS =-12.5V, ID≈-1A, VGS =-10V,
RGS =6Ω ,RL=1Ω
6.2
9.3
ns
Turn-ON Rise Time
tR
10
Turn-OFF Delay Time
tD(OFF)
18
Turn-ON Delay Time
tD(ON)
10
Turn-OFF Fall-Time
tF
5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
-9
A
Diode Pulse Current (Note 1)
ISM
-36
Forward Voltage (Note 2)
VSD
IF=IS, VGS=0V
-1.2
V
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse Width ≤ 300μsec, Duty Cycle ≤ 2%
3. Independent of operating temperature.



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