UT6302G-AE2-R datasheet(3/5 Pages) UTC

Nome de Peças	UT6302G-AE2-R

Descrição Electrónicos	P-CHANNEL ENHANCEMENT MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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3 / 5 page

UT6302

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-363.F



TEST CIRCUITS AND WAVEFORMS

(3)

D.U.T.

(2)

(1)

(4)

VGS

(Note 1)

dv/dt controlled by RG

ISD controlled by Duty Factor “D”

D.U.T. – Device Under Test

VDD

Low Stray Inductance

Ground Plane

Low Leakage Inductance

Current Transformer

Circuit Layout Considerations

(Note 1)

(Note 2)

Peak Diode Recovery dv/dt Test Circuit

ISD

Ripple≤5

Inductor Current

VDD

Body Diode Forward Drop

Body Recovery

dv/dt

D.U.T. VDS Waveform

(3)

(4)

Re-Applied

Voltage

Reverse

Recovery

Current

(2) D.U.T. I

SD Waveform

di/dt

Body Diode Forward Current

VGS=10V

(Note 3)

(1) Driver Gate Drive

P.W.

Period

D= Period

P.W.

Peak Diode Recovery dv/dt Waveforms

Reverse Polarity for P-Channel

Use P-Channel Driver for P-Channel Measurements

Notes:

VGS=5.0V for Logic Level and 3V Drive Devices

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