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UT3443G-AG6-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças UT3443G-AG6-R
Descrição Electrónicos  P-CHANNEL 2.5-V (G-S) MOSFET
PDF  3 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3443G-AG6-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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UT3443
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-557.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Drain Current
Continuous
TJ =150°C (Note 2)
TA=25°C
ID
-4.5
A
TA=70°C
-3.6
A
Pulsed
IDM
-20
A
Power Dissipation (Note 2)
TA=25°C
PD
1.1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Note: Surface Mounted on FR4 Board, t≤5 sec
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Leakage Current
IDSS
VDS=-20V, VGS=0V
-1
µA
VDS=-20V, VGS=0V, TC=70°C
-5
Gate- Source Leakage Current
Forward
IGSS
VGS=+12V, VDS=0V
+100
nA
Reverse
VGS=-12V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-0.6
-1.4
V
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=-4.5V, ID=-4.5A
0.050 0.065
Ω
VGS=-2.7V, ID=-3.8A
0.070 0.090
Ω
VGS=-2.5V, ID=-3.7A
0.080 0.100
Ω
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge
QG
VGS=-4.5V, VDS=-10V, ID=-4.5A
7.3
15
nC
Gate to Source Charge
QGS
2.0
nC
Gate to Drain Charge
QGD
1.9
nC
Gate Resistance
Rg
3
15
Ω
Turn-ON Delay Time
tD(ON)
VDD=-10V, ID≈-1.0A,
VGEN=-4.5V, RL=10Ω, RG=6Ω
15
50
ns
Rise Time
tR
32
60
ns
Turn-OFF Delay Time
tD(OFF)
50
100
ns
Fall-Time
tF
45
80
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 1)
VSD
IS=-1.7A, VGS=0V
-0.8
-1.2
V
Body Diode Reverse Recovery Time
tRR
IF=-1.7A, di/dt=100A/µs
35
80
ns
Notes: 1. Pulse test; pulse width ≤300μs, duty cycle ≤2%.
2. Guaranteed by design, not subject to production testing.



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