UT3416G-AE2-R datasheet(1/3 Pages) UTC

Nome de Peças	UT3416G-AE2-R

Descrição Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT3416

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-325.E

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UTC UT3416 is advanced n-channel enhancement

MOSFET which can provide the designer with the best combination

of excellent RDS (ON), low gate charge and low gate voltages as low

as 1.8V.When it is used as a load switch or in PWM application, the

UTC UT3416 can be considered as an ideal.



FEATURES

* VDS =20 V

* ID =6.5 A

* RDS(ON)<22 mΩ @ VGS=4.5V, ID =6.5A



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3416G-AE2-R

SOT-23-3

S

G

D

Tape Reel

UT3416G-AE3-R

SOT-23

S

G

D

Tape Reel



MARKING

34SG

Nº de peça semelhante - UT3416G-AE2-R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	UT3416G-AE2-R	240Kb / 5P	N-CHANNEL MOSFET

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Descrição semelhante - UT3416G-AE2-R

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UT3416G-AE2-R Folha de dados(PDF) 1 Page - Unisonic Technologies

UT3416G-AE2-R Folha de dados(HTML) 1 Page - Unisonic Technologies

Nº de peça semelhante - UT3416G-AE2-R

Descrição semelhante - UT3416G-AE2-R

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