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UT3413G-AE3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças UT3413G-AE3-R
Descrição Electrónicos  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3413G-AE3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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UT3413
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-159.F
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 3)
ID
-3
A
Pulsed Drain Current (Note 1, 2)
IDM
-15
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
70
90
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =-250µA
-20
V
Drain-Source Leakage Current
IDSS
VDS =-16V, VGS =0 V
-1
µA
Gate-Source Leakage Current
IGSS
VDS =0V, VGS = ±8 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-0.3
-0.55
-1
V
Drain-Source On-State Resistance(Note 2)
RDS(ON)
VGS =-4.5 V, ID =-3 A
81
97
mΩ
VGS =-2.5 V, ID =-2.6 A
108
130
mΩ
VGS =-1.8 V, ID =-1A
146
190
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-10 V, VGS =0V, f=1MHz
540
pF
Output Capacitance
COSS
72
pF
Reverse Transfer Capacitance
CRSS
49
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
VGS=-4.5V,VDS=-10V,
RL=3.3Ω, RGEN =3Ω
10
ns
Turn-ON Rise Time
tR
12
ns
Turn-OFF Delay Time
tD(OFF)
44
ns
Turn-OFF Fall Time
tF
22
ns
Total Gate Charge (Note 2)
QG
VDS=-10V, VGS =-4.5V, ID=-3A
6.1
nC
Gate-Source Charge
QGS
0.6
nC
Gate-Drain Charge
QGD
1.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
IS=-1A, VGS=0V
-0.78
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-2
A
Reverse Recovery Time
tRR
IF=-3 A, dI/dt=100A/μs
21
ns
Reverse Recovery Charge
QRR
7.5
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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