UT2321G-AE3-R datasheet(1/4 Pages) UTC

Nome de Peças	UT2321G-AE3-R

Descrição Electrónicos	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT2321

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-249.F

P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UT2321 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.



FEATURES

* RDS(ON) < 55mΩ @ VGS=-4.5V, ID=-2.4A

* RDS(ON) < 80mΩ @ VGS=-2.5V, ID=-2.0A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL

2.Gate

1.Source

3.Drain



ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UT2321G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

Nº de peça semelhante - UT2321G-AE3-R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	UT2321G-AE3-R	230Kb / 4P	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UT2321G-AE3-R Folha de dados(PDF) 1 Page - Unisonic Technologies

UT2321G-AE3-R Folha de dados(HTML) 1 Page - Unisonic Technologies

Nº de peça semelhante - UT2321G-AE3-R

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