2SK3666G-AE3-R datasheet(2/4 Pages) UTC

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2SK3666

Preliminary

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-109.a



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Drain Voltage

VGDS

-30

Gate Current

Drain Current

Continuous

Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Gate-Drain Breakdown Voltage

V(BR)GDS

IG=-10µA, VDS=0V

-30

Drain-Source Leakage Current

IDSS

VDS=10V, VGS=0V

0.6

6.0

Gate-Source Leakage Current

IGSS

VGS=-20V, VDS=0V

-1.0

Forward Transfer Admittance

│

yfs│

VGS=0V, VDS=10V, f=1kHz

3.0

6.5

ON CHARACTERISTICS

Cutoff Voltage

VGS(OFF)

VDS=10V, ID=1µA

-0.18 -0.95

-2.2

Static Drain-Source On-State Resistance

RDS(ON)

VGS=0V, VDS=10mV

270

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=10V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

1.1



CLASSIFICATION OF IDSS

RANK

RANGE

0.6 ~ 1.5

1.2 ~ 3.0

2.5 ~6.0

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