2SD1782G-X-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SD1782

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-107.b



ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise stated)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

0.5

Collector Power Dissipation

0.2

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~+150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise stated)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=50µA

Collector-Emitter Breakdown Voltage

BVCEO

IC=2mA

Emitter-Base Breakdown Voltage

BVEBO

IE=50µA

Collector Cutoff Current

ICBO

VCB=50V

0.5

µA

Emitter Cutoff Current

IEBO

VEB=4V

0.5

µA

Collector-Emitter Saturation Voltage

VCE(sat)

IC=500 mA, IB=50mA

0.2

0.5

DC Current Transfer Ratio

hFE

VCE=3V, IC=100mA

120

390

Transition Frequency

VCE=10V, IE=-50mA, f=100MHz

120

MHz

Output Capacitance

Cob

VCB=10V, IE=0A, f=1MHz

7.5



CLASSIFICATION OF hFE

RANK

RANGE

120~270

180~390

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