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MMDT8150G-AL6-R Folha de dados(PDF) 1 Page - Unisonic Technologies |
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MMDT8150G-AL6-R Folha de dados(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R218-017.b LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate interference. * Mounting cost and area can be cut in half. EQUIVALENT CIRCUIT Tr1 65 4 Tr2 12 3 ORDERING INFORMATION Ordering Number Package Packing Lead Free Halogen Free MMDT8150L-AL6-R MMDT8150G-AL6-R SOT-363 Tape Reel MARKING G: Halogen Free L: Lead Free T81 |
Nº de peça semelhante - MMDT8150G-AL6-R |
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Descrição semelhante - MMDT8150G-AL6-R |
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