TIP122

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-016.E



PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

100

V

Collector to Emitter Voltage

100

V

Emitter to Base Voltage

5

V

IC Collector Current

5

A

TO-126

36

W

TO-220

65

W

TO-220F

34

W

TO-252

38

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage

100

V

Collector-Emitter Saturation Voltage

2

V

Collector-Emitter Saturation Voltage

4

V

Base-Emitter Saturation Voltage

2.5

V

Collector Cut-Off Current

200

uA

Collector-Cut-Off Current

500

uA

Emitter Cut-Off Current

2

mA

DC Current Gain

1000

1000