IMX17G-AG6-R datasheet(2/4 Pages) UTC

2 / 4 page

IMX17

DUAL TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R215-00.D

ABSOLUTE MAXIMUM RATINGS (T

A=25°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

500

Collector Power Dissipation

300 (TOTAL)

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. 200mW per element must not be exceeded.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=100µA

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA

Emitter-Base Breakdown Voltage

BVEBO

IE=100µA

Collector Cut-Off Current

ICBO

VCB=30V

0.1

µA

Emitter Cut-Off Current

IEBO

VEB=4V

0.1

µA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=500mA, IB=50mA

0.6

DC Current Transfer Ratio

hFE

VCE= 3V, IC= 100mA(note)

120

390

Transition Frequency (Note)

VCE=5V, IE=-20mA, f=100MHz

250

MHz

Output Capacitance

COB

VCB= 10V, IE=0A, f=1MHz

Note: Measured using pulse current.

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