2SC5353_15 datasheet(2/4 Pages) UTC

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2SC5353

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (TC=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

900

Collector-Emitter Voltage

VCEO

700

Emitter-Base Voltage

VEBO

Collector Current

Pulse

ICP

Base Current

TO-220F/ TO-220F1

TO-126/TO-126C

Collector Power Dissipation

TO-220

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Tc=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO IC=1 mA, IE = 0

900

Collector-Emitter Breakdown Voltage

BVCEO IC=10 mA, IB = 0

700

Collector Cut-off Current

ICBO

VCB=720V, IE= 0

100

µA

Emitter Cut-off Current

IEBO

VEB=7V, IC= 0

µA

hFE1

VCE=5 V, IC=1 mA

DC Current Gain

hFE2

VCE=5 V, IC=0.15 A

Collector-Emitter Saturation Voltage

VCE(SAT) IC=1.2 A, IB=0.24 A

1.0

Base-Emitter Saturation Voltage

VBE(SAT) IC=1.2 A, IB=0.24 A

1.3

Rise Time

0.7

Storage Time

tSTG

4.0

Switching Time

Fall Time

0.5

µS

UNISONICTECHNOLOGIESCO.,LTD

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www.unisonic.com.tw

QW-R203-031,F

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