2SC4548G-X-AB3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SC4548

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-027.D



ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

400

Collector-Emitter Voltage

VCEO

400

Emitter-Base Voltage

VEBO

Collector Current

200

Collector Current (PULSE)

ICP

400

Collector Power Dissipation

1.3

Junction Temperature

150

C

Storage Temperature

TSTG

-55 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collect-Base Breakdown Voltage

BVCBO

IC= 10A,IE=0

400

Collect-Emitter Breakdown Voltage

BVCEO

IC= 1mA,IB=0,RBE=

400

Emitter-Base Breakdown Voltage

BVEBO

IE= 10A,IC=0

Collector Cutoff Current

ICBO

VCB= 300V,IE=0

0.1

A

Emitter Cutoff Current

IEBO

VEB=4V,IC=0

0.1

A

DC Current Transfer Ratio

hFE

VCE=10V, Ic=50mA

200

Collect-Emitter Saturation Voltage

VCE(SAT)

IC=50mA,IB=5mA

0.6

Base-Emitter Saturation Voltage

VBE(SAT)

IC=50mA,IB=5mA

1.0

Output Capacitance

COB

VCB=30V, f=1MHz

Reverse Transfer Capacitance

CRE

VCB=30V,f=1MHz

Gain-Bandwidth Product

VCE=30V,IC=10mA

MHz

Turn-on Time

TON

See test circuit

0.25

s

Turn-off Time

TOFF

See test circuit

5.0

s

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