UP1868G-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

UP1868

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R207-015.D



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-15

Collector-Emitter Voltage

VCEO

-12

Emitter-Base Voltage

VEBO

-6

Peak Pulse Current

IC(PEAK)

-20

Continuous Collector Current

-6

Power Dissipation

SOT-223

SOT-89

0.75

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Breakdown Voltage (Note)

BVCBO

IC=-100µA

-15

BVCEO

IC=-10mA

-12

BVEBO

IE=-100µA

-6

Collector-Emitter Saturation Voltage

(Note)

VCE(SAT)

IC=-500mA,IB=-5mA

-55

-100

IC=-2A, IB=-50mA

-132

-160

IC=-6A, IB=-250mA

-440

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-6A, IB=-250mA

-1050 -1200

Base-Emitter Turn-On Voltage (Note)

VBE(ON)

VCE=-1V, IC=-6A

-950 -1050

Collector Cut-Off Current

ICBO

VCB=-12V

-10

VCB=-12V,TA=100°C

-1.0

µA

Emitter Cut-Off Current

IEBO

VEB=-6V

-10

DC Current Gain (Note)

hFE1

VCE=-1V , IC=-10mA

300

hFE2

VCE=-1V , IC=-500mA

300

1000

hFE3

VCE=-1V , IC=-5mA

200

hFE4

VCE=-1V , IC=-10A

150

Current Gain Bandwidth Product

VCE=-10V, IC=-100mA, f=50MHz

MHz

Output Capacitance

Cob

VCB=-20V, f=1MHz

161

Switching Times

tON

IC=-4A, IB1=-400mA

120

tOFF

IB2=400mA, VCC=-10V

116

Note: Pulse test: Pulse Width=300μs, Duty Cycle≦2%

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