2SC2235

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-012.C



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

120

V

Emitter-Base Voltage

5

V

Collector Current

800

mA

Emitter Current

-800

mA

Collector Power Dissipation

600

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Breakdown Voltage

120

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-off Current

100

nA

Emitter Cut-off Current

100

nA

DC Current Gain

80

240

Collector-Emitter Saturation Voltage

1.0

V

Base-Emitter Voltage

1.0

V

Transition Frequency

120

MHz

Collector Output Capacitance

30

pF



RANK

Y

O

RANGE

120-240

80-160