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BGY66B Folha de dados(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Nome de Peças BGY66B
Descrição Electrónicos  120 MHz, 25 dB gain reverse amplifier
PDF  8 Pages
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Fabricante Electrônico  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Página de início  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BGY66B Folha de dados(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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2001 Oct 18
2
Philips Semiconductors
Product specification
120 MHz, 25 dB gain reverse amplifier
BGY66B
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Intended as a reverse amplifier for
use in two-way systems.
DESCRIPTION
Hybrid high dynamic range amplifier
module designed for applications in
CATV systems with a bandwidth of
5 to 120 MHz operating with a
voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
fpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 10 MHz
24.5
25.5
dB
Itot
total current consumption (DC)
VB = 24 V
115
135
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
−
65
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C



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