12N10G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

12N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-737.E



ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (VGS=0)

VDSS

100

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

TC=25°C

TC=100°C

8.5

Pulsed (Note 2)

IDM

Power Dissipation

TO-220

TO-251/TO-252

SOP-8

Avalanche Energy (Note 3)

EAS

100

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

3. Starting TJ = 25°C, ID = 12A, VDD = 50V



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

θJA

62.5

°C/W

TO-251/TO-252

100

SOP-8

75 (Note)

Junction to Case

TO-220

θJC

1.71

°C/W

TO-251/TO-252

4.1

SOP-8

25 (Note)

Note: Device mounted on 1in

2 FR-4 board with 2oz. Copper, t = 10sec.

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