IRHN57250SE datasheet(1/8 Pages) IRF

Nome de Peças	IRHN57250SE

Descrição Electrónicos	Simple Drive Requirements

PDF	8 Pages

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

31

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

19

IDM

Pulsed Drain Current

À

124

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

Á

300

mJ

IAR

Avalanche Current

À

31

A

EAR

Repetitive Avalanche Energy

À

15

mJ

dv/dt

Peak Diode Recovery dv/dt

Â

7.0

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

°C

Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

2.6 (Typical)

g

Pre-Irradiation

International Rectifier’s R5TM technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm2)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

A

RADIATION HARDENED

IRHN57250SE

POWER MOSFET

SURFACE MOUNT (SMD-1)

12/21/11

www.irf.com

1

200V, N-CHANNEL

TECHNOLOGY

SMD-1

Product Summary

Part Number

Radiation Level

RDS(on)

ID

IRHN57250SE 100K Rads (Si)

0.06

Ω 31A

Features:

n Single Event Effect (SEE) Hardened

n Ultra Low RDS(on)

n Low Total Gate Charge

n Proton Tolerant

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

n Ceramic Package

n Light Weight

For footnotes refer to the last page

5

PD-94236C

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