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IRHN7250SE Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRHN7250SE
Descrição Electrónicos  Simple Drive Requirements
PDF  8 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRHN7250SE Folha de dados(HTML) 2 Page - International Rectifier

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IRHN7250SE
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.26
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.10
VGS = 12V, ID = 16A
Resistance
0.105
VGS = 12V, ID = 26A
VGS(th)
Gate Threshold Voltage
2.5
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
7.5
S ( )VDS > 15V, IDS = 16A ➃
IDSS
Zero Gate Voltage Drain Current
25
VDS= 160V ,VGS=0V
250
VDS = 160V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
180
VGS =12V, ID = 26A
Qgs
Gate-to-Source Charge
35
nC
VDS = 100V
Qgd
Gate-to-Drain (‘Miller’) Charge
83
td(on)
Turn-On Delay Time
33
VDD =100V, ID =26A,
tr
Rise Time
140
VGS =12V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
140
tf
Fall Time
140
LS + LD
Total Inductance
4.0
Ciss
Input Capacitance
3100
VGS = 0V, VDS = 25V
Coss
Output Capacitance
990
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
380
nA
nH
ns
µA
Thermal Resistance
Parameter
M i n Typ M a x Units
Test Conditions
RthJC
Junction-to-Case
0.83
RthJ-PCB
Junction-to-PC board
6.6
Soldered to a 1 inch square clad PC board
°C/W
Measured from the center of drain
pad to center of source pad
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
26
ISM
Pulse Source Current (Body Diode) ➀
104
VSD
Diode Forward Voltage
1.9
V
Tj = 25°C, IS = 26A, VGS = 0V ➃
trr
Reverse Recovery Time
550
nS
Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
8.8
µCVDD ≤ 50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page



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