IRFS3607PBF_15 datasheet(2/11 Pages) IRF

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IRFB/S/SL3607PbF

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ISD  46A, di/dt  1920A/μs, VDD V(BR)DSS, TJ  175°C.

Pulse width  400μs; duty cycle  2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-

mended footprint and soldering techniques refer to application note #AN-994.

Ris measured at TJ approximately 90°C.

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Note that current limitations arising from heating of the

device leads may occur with some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.12mH

RG = 25, IAS = 46A, VGS =10V. Part not recommended for use

above this value.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

––– 0.096 –––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

7.34

9.0



VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

μA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

115

–––

Total Gate Charge

–––

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

RG(int)

Internal Gate Resistance

–––

0.55

–––



td(on)

Turn-On Delay Time

–––

Rise Time

–––

110

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

3070 –––

Coss

Output Capacitance

–––

280

–––

Crss

Reverse Transfer Capacitance

–––

130

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)j –––

380

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)h

–––

610

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

(Body Diode)

ISM

Pulsed Source Current

–––

310

(Body Diode)

Ãd

VSD

Diode Forward Voltage

–––

1.3

dv/dt

Peak Diode Recovery

–––

V/ns

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 64V,

–––

TJ = 125°C

IF = 46A

Qrr

Reverse Recovery Charge

–––

nC TJ = 25°C

di/dt = 100A/μs

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

1.9

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

MOSFET symbol

RG = 6.8

VGS = 10V g

VDD = 49V

ID = 46A, VDS =0V, VGS = 10V

ID = 46A

Conditions

VDS = 50V, ID = 46A

ID = 46A

VGS = 20V

VGS = -20V

VDS = 60V, VGS = 0V, TJ = 125°C

showing the

VDS = 38V

Conditions

VGS = 10V g

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 60V j

VGS = 0V, VDS = 0V to 60V h

TJ = 175°C, IS = 46A, VDS = 75V f

TJ = 25°C, IS = 46A, VGS = 0V g

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5mAd

VGS = 10V, ID = 46A g

VDS = VGS, ID = 100μA

VDS = 75V, VGS = 0V

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