Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SBA4086Z

DCto5GHz, CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction

Bipolar Transistor MMIC Amplifier. A Darlington configuration designed

with InGaP process technology provides broadband performance up to

5GHz with excellent thermal performance. The heterojunction increases

breakdown voltage and minimizes leakage current between junctions.

Cancellation of emitter junction non-linearities results in higher suppres-

sion of intermodulation products. Only a single positive supply voltage, DC-

blocking capacitors, a bias resistor, and an optional RF choke are required

for operation.

Gain and Return Loss vs Frequency

-40

-35

-30

-25

-20

-15

-10

-5

0

5

10

15

20

01

23

45

6

Frequency (GHz)

S21

s22

s11



IP3=33.5dBm at 1950MHz



ACP IS-95 1950MHz



Robust 1000V ESD, Class 1C



Operates From Single Supply



Patented Thermal Design

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

Terminals

DS110708



Package: SOT-86

SBA4086Z

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

13.3

14.8

16.3

dB

850MHz

12.7

14.2

15.7

dB

1950MHz

Output Power at 1dB Compression

19.1

dBm

850MHz

17.5

19.0

dBm

1950MHz

Output Third Order Intercept Point

36.5

dBm

850MHz

31.5

33.5

dBm

1950MHz

Output Power

12.3

dBm

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Bandwidth

5000

MHz

Return Loss>10dB

Input Return Loss

14.0

21.0

dB

1950MHz

Output Return Loss

14.0

20.5

dB

1950MHz

Noise Figure

4.8

5.8

dB

1950MHz

Device Operating Voltage

4.6

5.0

5.4

V

Device Operating Current

72

80

88

mA

Thermal Resistance (junction to lead)

102

°C/W