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RFDA2015SR Folha de dados(PDF) 2 Page - RF Micro Devices |
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RFDA2015SR Folha de dados(HTML) 2 Page - RF Micro Devices |
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2 / 10 page ![]() 2 of 10 RFDA2015 DS101117 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (VCC, VDD) 5.5 V Collector Current (IC)200 mA Power Dissipation1 (PDISS) 750 mW RF Input Power 20 dBm Operating Temperature (TCASE) -40 to +85 °C Junction Temperature (TJ) 150 °C Storage Temperature -40 to +150 °C ESD Rating (HBM) Class 1B Moisture Sensitivity Level MSL 3 Notes: 1. PDISS=VCC*IC-RF Output Power+RF Input Power Parameter Specification Unit Condition Min. Typ. Max. Frequency Range 500 2500 MHz Gain (Max Gain State) 10.0 11.5 13.0 dB Attenuation=0dB, 2017MHz Gain Control Range 31.5 dB 0.5dB LSB, 6 bits Step Accuracy ±(0.1 +5% attenuation setting) dB Major state max error Output IP3 40 43 dBm 2017MHz, POUT=5dBm/tone, 1MHz spacing Output P1dB 23 25 dBm Attenuation=0dB, 2017MHz Input Return Loss 17 dB 2017MHz Output Return Loss 11 dB 2017MHz Noise Figure 7 dB 2017MHz, Attenuation=0dB tRISE, tFALL 200 ns 10/90% RF Amplifier Supply Voltage (VCC) 4.75 5.00 5.25 V Attenuator Supply Voltage (VDD) 3.30 5.00 5.25 V Total Supply Current 90 115 135 mA Sum of currents from VDD and VCC Thermal Resistance 87 °C/W Control Interface 6 Bit, Parallel Control Voltages Low, VCTL=0 to 0.8 VDC High, VCTL=2.0 to VDD VDC V Notes: 1. All measurements based on the 1800MHz to 2200MHz Application Circuit, T=25°C 2. VCC=VDD=+5V, VCTL=0/5V Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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