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WFF8N60 Folha de dados(PDF) 1 Page - Wisdom technologies Int`l

Nome de Peças WFF8N60
Descrição Electrónicos  600V N-Channel MOSFET
PDF  6 Pages
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Fabricante Electrônico  WISDOM [Wisdom technologies Int`l]
Página de início  http://www.wisdom-technologies.com/index.aspx
Logo WISDOM - Wisdom technologies Int`l

WFF8N60 Folha de dados(HTML) 1 Page - Wisdom technologies Int`l

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HIGH VOLTAGE
N-Channel MOSFET 
 
 
   Rev.A0,August , 2010 | 
1 
 
 
 
WFF8 N60
 
600V N-Channel MOSFET
Features
□
Low Intrinsic Capacitances 
□
Excellent Switching Characteristics 
TO‐220F  
G‐Gate,D‐Drain,S‐Sourse 
□
Extended Safe Operating Area 
□
Unrivalled Gate Charge :Qg= 40nC (Typ.)
□
BVDSS=600V,ID=7.5A
□
RDS(on) :1.32 Ω (Max) @VG=10V
 
□
100% Avalanche Tested
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
Parameter
WFF8
VDSS
Drain-Sourse Voltage
600
V
ID
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
4.7*
A
VGS
Gate-Sourse Voltage
±
30
V
EAS
Single Plused Avanche Energy
(Note1)
420
mJ
IAR
Avalanche Current
(Note2)
7.5
A
PD
Power Dissipation (Tc=25℃)
48
W
TJ,TSTG
Operating and Storage Temperature Range
-55 ~ +150
℃
TL
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
300
℃
Thermal Characteristics
 
Symbol
Parameter
Typ.
Max
Units
RθJC
Thermal Resistance,Junction to Case
--
2.6
℃
/W
RθJA
Thermal Resistance,Junction to Ambient
--
62.5
℃
/W
* Drain current limited by maximum junction temperature.
7.5*
A
G
S
D
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N60
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