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STS6409 Folha de dados(PDF) 2 Page - SamHop Microelectronics Corp.

Nome de Peças STS6409
Descrição Electrónicos  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Fabricante Electrônico  SAMHOP [SamHop Microelectronics Corp.]
Página de início  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS6409 Folha de dados(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
1
IGSS
±10
uA
VGS(th)
-0.5
V
m ohm
VGS=-4.5V , ID=-2.0A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-1mA
VDS=-16V , VGS=0V
VGS=±10V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
ON CHARACTERISTICS
STS6409
Ver 1.0
-0.7
-1.5
gFS
11
S
VSD
CISS
613
pF
COSS
159
pF
CRSS
141
pF
Qg
85
nC
225
nC
Qgs
1310
nC
Qgd
605
tD(ON)
11.8
ns
tr
0.85
ns
tD(OFF)
4.7
ns
tf
ns
Gate-Drain Charge
VDS=-10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-16V
ID=-2.0A
VGS=-4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=-5V , ID=-2.0A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=-2.5V , ID=-2.0A
m ohm
c
f=1.0MHz
c
VDS=-16V,ID=-4.0A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=-1.1A
-0.8
-1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Aug,22,2012
2
_
38
49
49
65
VGS=-3.1V , ID=-2.0A
m ohm
44
58
m ohm
VGS=-4.0V , ID=-2.0A
39
50
m ohm
VGS=-3.7V , ID=-2.0A
40
52
31
39
36
32
33



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