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STM4446 Folha de dados(PDF) 2 Page - SamHop Microelectronics Corp.

Nome de Peças STM4446
Descrição Electrónicos  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Fabricante Electrônico  SAMHOP [SamHop Microelectronics Corp.]
Página de início  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4446 Folha de dados(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
V
13
m ohm
VGS=10V , ID=4.5A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
16.5
STM4446
Ver 1.0
www.samhop.com.tw
Dec,14,2012
2
12.1
3
gFS
S
CISS
845
pF
COSS
124
pF
CRSS
100
pF
Qg
17.6
nC
19
18.3
32
tD(ON)
14
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=10V , ID=4.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
c
f=1.0MHz
c
VSD
nC
Qgs
nC
Qgd
1.7
4.8
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=20V,ID=4.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=3A
0.8
1.3
V
Notes
VDS=20V,ID=4.5A,VGS=10V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
_
_
_
18
VGS=4.5V , ID=3.5A
m ohm
19
26
nC
7.3
VDS=20V,ID=4.5A,VGS=4.5V



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