STK103 datasheet(3/7 Pages) SAMHOP

Nome de Peças	STK103

Descrição Electrónicos	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Fabricante Electrônico	SAMHOP [SamHop Microelectronics Corp.]

Página de início	http://www.samhop.com.tw

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STK103

www.samhop.com.tw

Jul,13,2011

Figure 1. Output Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

Tj=125 C

-55 C

25 C

ID, Drain Current (A)

600

500

400

300

200

100

0.1

Tj( C)

150

100

125

Tj, Junction Temperature ( C)

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

-50

-25

100 125 150

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

Tj, Junction Temperature ( C)

-50

-25

100 125 150

1.3

1.2

1.1

1.0

0.9

0.8

0.7

Drain Current and Temperature

Figure 4. On-Resistance Variation with

and Gate Voltage

Figure 3. On-Resistance vs. Drain Current

Ver 1.1

0.5

1.0

1.5

2.0

2.5

3.0

VGS =3V

VGS =10V

VGS =5V

VGS = 4.5V

VGS=10V

ID=1.00A

VGS=4.5V

ID=0.82A

VGS = 3.5V

VGS = 4.5V

0.8

1.6

1.2

2.0

1.8

1.4

1.0

ID = 250uA

VGS =4V

VDS =VGS

ID = 250uA

0.5

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