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STB458D Folha de dados(PDF) 2 Page - SamHop Microelectronics Corp.

Nome de Peças STB458D
Descrição Electrónicos  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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Fabricante Electrônico  SAMHOP [SamHop Microelectronics Corp.]
Página de início  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STB458D Folha de dados(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
1
V
8.5
gFS
65
S
VSD
CISS
1500
pF
COSS
250
pF
CRSS
170
pF
Qg
25
nC
30
nC
Qgs
65
nC
Qgd
40
tD(ON)
25
ns
tr
2.6
ns
tD(OFF)
7
ns
tf
ns
Gate-Drain Charge
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=20V,ID=15A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=15A
VDS=10V , ID=15A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=13A
10.5
10.5
14
m ohm
c
f=1.0MHz
c
VDS=20V,ID=15A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=6A
0.8
1.3
V
STB458D
Ver 1.0
www.samhop.com.tw
Apr,23,2010
2
1.9
nC
12.5
VDS=20V,ID=15A,VGS=4.5V
N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)



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