SP8076 datasheet(1/6 Pages) SAMHOP

Nome de Peças	SP8076

Descrição Electrónicos	Super high dense cell design for low RDS(ON).

PDF	6 Pages

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Fabricante Electrônico	SAMHOP [SamHop Microelectronics Corp.]

Página de início	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

33V

27A

6.9 @ VGS=4.5V

4.6 @ VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

N-Channel Enhancement Mode Field Effect Transistor

Ver 2.1

www.samhop.com.tw

Jul,18,2013

1

Details are subject to change without notice.

TSON 3.3 x 3.3

Pin 1

SP8076

Green

Product

Symbol

VDS

VGS

IDM

A

PD

°C

-55 to 150

ID

Units

Parameter

33

27

90

V

±20

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

A

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

75

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

TA=25°C

W

1.67

a

Nº de peça semelhante - SP8076

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SamHop Microelectronics...	SP8076E	118Kb / 8P	Super high dense cell design for low RDS(ON).
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SP8076 Folha de dados(PDF) 1 Page - SamHop Microelectronics Corp.

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