Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF130 __ __

__ = Not Screen

TX = TX Level

TXV = TXV Level

S = S Level

│

│

│

│

│

│

│

└

Package

/3= TO-3

/66= TO-66

TO-66

TO-3

SFF130/3 & SFF130/66

14 AMP / 100 Volts

0.18

Ω

N-Channel Power MOSFET

Features:

• Rugged Construction with Poly Silicon Gate

• Low R

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy Paralleling

• Hermetically Sealed Package

• Available in both hot case and isolated versions

• Ideal for low power applications

Symbol

Value

Units

Drain – Source Voltage

100

Volts

Gate – Source Voltage

±20

Volts

Continuous Collector Current

14

9

Amps

Power Dissipation

25

19

Watts

Operating & Storage Temperature

Top & Tstg

-55 to +150

ºC

Thermal Resistance Junction to Case

5

ºC/W

Single Pulse Avalanche Energy

75

mJ

Repetitive Avalanche Energy

7.5

mJ

TO-66

TO-3

1.197

1.177

Ø.875

MAX

2x .043

.038

.675

.655

.525 MAX

.135 MAX

.440

.420

2x .225

.205

.450

.250

2x .312 MIN

2x Ø

.165

.151

2x R.188 MAX

SEATING PLANE

2

1

NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500/542.

3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00307B

DOC