AN3161 datasheet(9/14 Pages) STMICROELECTRONICS

Nome de Peças	AN3161

Descrição Electrónicos	Using the STGW35HF60WD advanced PT IGBT in parallel

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

9 / 14 page

AN3161

The STGW35HF60WD on the test bench

Doc ID 17151 Rev 1

9/14

The STGW35HF60WD on the test bench

A DC-DC boost converter (Figure 5) has been used as a test vehicle to evaluate two

STGW35HF60WD IGBTs working in parallel.

Figure 5.

DC-DC boost scheme

Boost specifications:

–VIN(DC) = 250 V

–ITAV = 20 A

–VOUT = 380 V

–Fsw = 30 kHz

–

Duty = 0.33%

–

CCM operation

A preliminary analysis has been performed to measure the dynamic

∆IC established

between several couples of paralleled IGBTs. To target the best current sharing, the static

VCE(sat)(@20 A,15 V, 25 °C) has been chosen as selection criteria to split the total IGBT

population (as illustrated in Figure 6) and three sets of tests are reported in this document.

Figure 6.

VCE(sat)(@20 A, 25 °C, 15 V) grouping for the STGW35HF60WD

AN3161 Folha de dados(PDF) 9 Page - STMicroelectronics