NPT1010_15 datasheet(1/10 Pages) MA-COM

Nome de Peças	NPT1010

Descrição Electrónicos	100W RF Power Transistor

PDF	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	MA-COM [M/A-COM Technology Solutions, Inc.]

Página de início	http://www.macomtech.com

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NPT1010

NDS-023 Rev. 3, April 2013

NPT1010

Page 1

FEATURES

• Optimized for broadband operation from

DC – 2000MHz

• 100W P3dB CW power at 900MHz

• 60-95 W PSAT CW power from 500-1000MHz in

broadband application design

• High efficiency from 14 - 28V

• 1.4 °C/W RTH with maximum TJ rating of 200°C

• Robust up to 10:1 VSWR mismatch at all phase

angles with no damage to the device

• Subject to EAR99 export control

DC – 2000 MHz

14 – 28 Volt

GaN HEMT

Gallium Nitride 28V, 100W RF Power Transistor

Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology

RF Specifications (CW, 900MHz): VDS = 28V, IDQ = 700mA, TA = 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P3dB

Average Output Power at 3dB Gain Compression

49.0

50.0

-

dBm

P1dB

Average Output Power at 1dB Gain Compression

-

49.0

-

dBm

GSS

Small Signal Gain

18.7

19.7

-

dB

h

Drain Efficiency at 3dB Gain Compression

57

64

-

%

VSWR

10:1 VSWR at all phase angles

No damage to the device

Figure 1 - Typical CW Performance in Load-Pull,

VDS = 28V, IDQ = 700mA

Figure 2 - Typical CW Performance in Load-Pull,

VDS = 28V, IDQ = 700mA

Nº de peça semelhante - NPT1010_15

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M/A-COM Technology Solu...	NPT1010	1Mb / 10P	Gallium Nitride 28V, 100W RF Power Transistor
List of Unclassifed Man...	NPT1010	1Mb / 10P	Gallium Nitride 28V, 100W RF Power Transistor

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NPT1010 Folha de dados(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

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