IRHI7460SE datasheet(3/4 Pages) IRF

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Table 2. High Dose Rate

1011 Rads (Si)/sec 1012 Rads (Si)/sec

Parameter

Min. Typ Max. Min. Typ. Max.

Units

Test Conditions

VDSS

Drain-to-Source Voltage

—

400

—

400

Applied drain-to-source voltage

during gamma-dot

IPP

—

Peak radiation induced photo-current

di/dt

—

2.3

—

A/µsec Rate of rise of photo-current

—

133

—

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

VDS Bias

VGS Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm2)

(ions/cm2)(

µm)

(V)

BVDSS

500

1 x 105

~35

400

-5

Radiation Performance of Rad Hard HEXFETs

IRHI7460SE Device

Radiation Characteristics

Table 1. Low Dose Rate

IRHI7460SE

Parameter

100K Rads (Si)

Units

Test Conditions

min.

max.

BVDSS

Drain-to-Source Breakdown Voltage

500

—

VGS = 0V, ID = 1.0 mA

VGS(th)

Gate Threshold Voltage

2.5

4.5

VGS = VDS, ID = 1.0 mA

IGSS

Gate-to-Source Leakage Forward

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

-100

VGS = -20V

IDSS

Zero Gate Voltage Drain Current

—

µAVDS = 0.8 x Max Rating, VGS = 0V

RDS(on)1

Static Drain-to-Source

—

0.32

Ω

VGS = 12V, ID = 12A

On-State Resistance One

VSD

Diode Forward Voltage

—

1.8

TC = 25°C, IS = 20A, VGS = 0V

International Rectifier Radiation Hardened HEX-

FETs are tested to verify their hardness capability.

The hardness assurance program at International

Rectifier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

VDSS bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 105 Rads (Si)

are identical and are presented in Table 1. The val-

ues in Table 1 will be met for either of the two low

dose rate test circuits that are used.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 105

Rads (Si), no change in limits are specified in DC

parameters.

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 1012 Rads

(Si)/Sec.

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

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