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IRGPC50FD2 Folha de dados(PDF) 2 Page - International Rectifier |
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IRGPC50FD2 Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 8 page  C-126 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 110 170 IC = 39A Qge Gate - Emitter Charge (turn-on) — 20 30 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) — 50 75 See Fig. 8 td(on) Turn-On Delay Time — 70 — TJ = 25°C tr Rise Time — 110 — ns IC = 39A, VCC = 480V td(off) Turn-Off Delay Time — 400 600 VGE = 15V, RG = 5.0Ω tf Fall Time — 290 400 Energy losses include "tail" and Eon Turn-On Switching Loss — 2.5 — diode reverse recovery. Eoff Turn-Off Switching Loss — 6.0 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 8.5 13 td(on) Turn-On Delay Time — 68 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time — 100 — ns IC = 39A, VCC = 480V td(off) Turn-Off Delay Time — 760 — VGE = 15V, RG = 5.0Ω tf Fall Time — 520 — Energy losses include "tail" and Ets Total Switching Loss — 14 — mJ diode reverse recovery. LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 3000 — VGE = 0V Coes Output Capacitance — 340 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 40 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 50 75 ns TJ = 25°C See Fig. — 105 160 TJ = 125°C 14 IF = 25A Irr Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C See Fig. — 8.0 15 TJ = 125°C 15 V R = 200V Qrr Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C See Fig. — 420 1200 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig. During tb — 160 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.6 1.7 IC = 39A VGE = 15V — 2.0 — V IC = 70A See Fig. 2, 5 — 1.7 — IC = 39A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 21 24 — S VCE = 100V, IC = 39A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 6500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13 — 1.2 1.5 IC = 25A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V IRGPC50FD2 VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω, ( See fig. 19 ) Pulse width 5.0µs, single shot. Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Pulse width ≤ 80µs; duty factor ≤ 0.1%. Next Data Sheet Index Previous Datasheet To Order |
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