IRFIZ24N datasheet(1/8 Pages) IRF

Nome de Peças	IRFIZ24N

Descrição Electrónicos	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

Logo

1 / 8 page

IRFIZ24N

HEXFET® Power MOSFET

PD - 9.1501A

S

D

G

VDSS = 55V

RDS(on) = 0.07Ω

ID = 14A

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

TO-220 FULLPAK

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

5.2

RθJA

Junction-to-Ambient

–––

65

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial

applications. The moulding compound used provides

a high isolation capability and a low thermal resistance

between the tab and external heatsink. This isolation

is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to

a heatsink using a single clip or by a single screw

fixing.

8/25/97

Description

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

14

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

10

A

IDM

Pulsed Drain Current

68

PD @TC = 25°C

Power Dissipation

29

W

Linear Derating Factor

0.19

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

71

mJ

IAR

Avalanche Current

10

A

EAR

Repetitive Avalanche Energy

2.9

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

°C/W

Nº de peça semelhante - IRFIZ24N

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Kersemi Electronic Co.,...	IRFIZ24N	5Mb / 8P	Advanced Process Technology
Inchange Semiconductor ...	IRFIZ24N	260Kb / 2P	Isc N-Channel MOSFET Transistor
International Rectifier	IRFIZ24NPBF	218Kb / 9P	HEXFET짰 Power MOSFET
International Rectifier	IRFIZ24NPBF	219Kb / 9P	Advanced Process Technology
VBsemi Electronics Co.,...	IRFIZ24NPBF	2Mb / 8P	N-Channel 60 V (D-S) MOSFET

More results

Descrição semelhante - IRFIZ24N

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	IRC503	226Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
	IRF3315	124Kb / 8P	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
	IRF530S	180Kb / 6P	Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
	IRF644	173Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
	IRF9530N	113Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
	IRF9530NS	173Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
	IRFIZ24E	114Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=0.071ohm, Id=14A)
	IRFIZ24V	83Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=0.060ohm, Id=14A)
	IRFZ24N	123Kb / 8P	Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
	IRFZ24NS	159Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

More results

IRFIZ24N Folha de dados(PDF) 1 Page - International Rectifier

IRFIZ24N Folha de dados(HTML) 1 Page - International Rectifier

Nº de peça semelhante - IRFIZ24N

Descrição semelhante - IRFIZ24N

Html Pages

1 2 3 4 5 6 7 8

Folha de dados Download

Ligação URL