R5F2136CMDFP datasheet(49/61 Pages) RENESAS

49 / 61 page

R8C/36M Group

5. Electrical Characteristics

R01DS0086EJ0100 Rev.1.00

Page 49 of 58

Jun 15, 2011

Note:

1. 2.7 V

≤ VCC < 4.2 V, Topr = −20 to 85 °C (N version)/−40 to 85 °C (D version), and f(XIN) = 10 MHz, unless otherwise

specified.

Table 5.25

Electrical Characteristics (3) [2.7 V

≤ VCC < 4.2 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H” voltage

Other than XOUT

Drive capacity High IOH =

−5 mA

VCC

− 0.5

—

VCC

Drive capacity Low

IOH =

−1 mA

VCC

− 0.5

—

VCC

XOUT

IOH =

−200 µA1.0

—

VCC

VOL

Output “L” voltage

Other than XOUT

Drive capacity High IOL = 5 mA

—

0.5

Drive capacity Low

IOL = 1 mA

—

0.5

XOUT

IOL = 200

µA—

—

0.5

VT+-VT-

Hysteresis

INT0, INT1, INT2,

INT3, INT4,

KI0, KI1, KI2, KI3,

TRAIO, TRCIOA,

TRCIOB, TRCIOC,

TRCIOD, TRDIOA0,

TRDIOB0, TRDIOC0,

TRDIOD0, TRDIOA1,

TRDIOB1, TRDIOC1,

TRDIOD1, TRCTRG,

TRCCLK, TRFI,

TRGIOA, TRGIOB,

ADTRG, RXD0,

RXD1, RXD2, CLK0,

CLK1, CLK2, SSI,

SCL, SDA, SSO

VCC = 3.0 V

0.1

0.4

—

RESET

VCC = 3.0 V

0.1

0.5

—

IIH

Input “H” current

VI = 3 V, VCC = 3.0 V

—

4.0

µA

IIL

Input “L” current

VI = 0 V, VCC = 3.0 V

—

−4.0

µA

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 3.0 V

168

Ω

RfXIN

Feedback

resistance

XIN

—

0.3

—

Ω

RfXCIN

Feedback

resistance

XCIN

—

Ω

VRAM

RAM hold voltage

During stop mode

1.8

—

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