IRFD310 datasheet(1/8 Pages) IRF

Nome de Peças	IRFD310

Descrição Electrónicos	Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)

PDF	8 Pages

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10 V

0.35

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10 V

0.22

A

IDM

Pulsed Drain Current

2.8

PD @TC = 25°C

Power Dissipation

1.0

W

Linear Derating Factor

0.0083

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

46

mJ

IAR

Avalanche Current

0.35

A

EAR

Repetitive Avalanche Energy

0.10

mJ

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

IRFD310

HEXFET® Power MOSFET

PD -9.1225

Revision 0

VDSS = 400V

RDS(on) = 3.6Ω

ID = 0.35A

Absolute Maximum Ratings

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJA

Junction-to-Ambient

—

62

°C/W

Dynamic dv/dt Rating

Repetitive Avalanche Rated

For Automatic Insertion

End Stackable

Fast Switching

Ease of paralleling

Simple Drive Requirements

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The 4-pin DIP package is a low-cost machine-insertable case style which can be

stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain

serves as a thermal link to the mounting surface for power dissipation levels up to

1 watt.

Description

A

HD-1

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Nº de peça semelhante - IRFD310

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Intersil Corporation	IRFD310	50Kb / 6P	0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET July 1999
Vishay Siliconix	IRFD310	1Mb / 8P	Power MOSFET 23-Jun-08
Vishay Siliconix	IRFD310	528Kb / 9P	Power MOSFET 30-Aug-2021
International Rectifier	IRFD310PBF	1Mb / 8P	HEXFET짰 Power MOSFET
Vishay Siliconix	IRFD310PBF	1Mb / 8P	Power MOSFET 23-Jun-08

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Descrição semelhante - IRFD310

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	IRC730	223Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)
	IRC740	221Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)
	IRFD320	478Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)
	IRFI720G	170Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)
	IRFI740G	169Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
	IRFI740GLC	221Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.7A)
	IRFP350	161Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)
	IRFP350LC	333Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)
	IRFR310	173Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
	JANTX2N6786	230Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)

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