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2SC5010 Folha de dados(PDF) 2 Page - California Eastern Labs

Nome de Peças 2SC5010
Descrição Electrónicos  NPN SILICON EPITAXIAL TRANSISTOR
PDF  9 Pages
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Fabricante Electrônico  CEL [California Eastern Labs]
Página de início  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5010 Folha de dados(HTML) 2 Page - California Eastern Labs

  2SC5010 Datasheet HTML 1Page - California Eastern Labs 2SC5010 Datasheet HTML 2Page - California Eastern Labs 2SC5010 Datasheet HTML 3Page - California Eastern Labs 2SC5010 Datasheet HTML 4Page - California Eastern Labs 2SC5010 Datasheet HTML 5Page - California Eastern Labs 2SC5010 Datasheet HTML 6Page - California Eastern Labs 2SC5010 Datasheet HTML 7Page - California Eastern Labs 2SC5010 Datasheet HTML 8Page - California Eastern Labs 2SC5010 Datasheet HTML 9Page - California Eastern Labs  
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2SC5010
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
μ
A
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
μ
A
VEB = 1 V, IC = 0
h
ni
a
G
t
n
e
rr
u
C
C
D
FE
75
150
VCE = 3 V, IC = 10 mA*1
Gain Bandwidth Product
fT
12.0
GHz
VCE = 3 V, IC = 10 mA, f = 2 GHz
Feed-Back Capacitance
Cre
0.4
0.7
pF
VCE = 3 V, IE = 0 , f = 1 MHz*2
Insertion Power Gain
|S21e|2
7.0
8.5
dB
VCE = 3 V, IC = 10 mA, f = 2 GHz
V
B
d
5
.
2
5
.
1
F
N
e
r
u
gi
F
e
si
o
N
CE
= 3 V, IC = 3 mA, f = 2 GHz
*1 Pulse Measurement PW ≤ 350 μs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
Rank
FB
Marking
83
hFE
75 to 150
NE68519 /



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