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2SC3356 Folha de dados(PDF) 3 Page - California Eastern Labs

Nome de Peças 2SC3356
Descrição Electrónicos  NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
PDF  9 Pages
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Fabricante Electrônico  CEL [California Eastern Labs]
Página de início  http://www.cel.com
Logo CEL - California Eastern Labs

2SC3356 Folha de dados(HTML) 3 Page - California Eastern Labs

  2SC3356 Datasheet HTML 1Page - California Eastern Labs 2SC3356 Datasheet HTML 2Page - California Eastern Labs 2SC3356 Datasheet HTML 3Page - California Eastern Labs 2SC3356 Datasheet HTML 4Page - California Eastern Labs 2SC3356 Datasheet HTML 5Page - California Eastern Labs 2SC3356 Datasheet HTML 6Page - California Eastern Labs 2SC3356 Datasheet HTML 7Page - California Eastern Labs 2SC3356 Datasheet HTML 8Page - California Eastern Labs 2SC3356 Datasheet HTML 9Page - California Eastern Labs  
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NE85633 / 2SC3356
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Jun 28, 2011
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
1
5
10
0
5
5
.
0
VCE = 10 V
250
200
150
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free air
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3
0.5
0.2
1
2
5
10
30
20
f = 1 MHz
VCE = 10 V
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
0.1
1
5 10
50
0
0
1
5
.
0
1
.
0
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
10
0
5
0.5
1
10
50 0
7
5
VCE = 10 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
25
15
20
5
10
0
0.05
0.1
0.5
1
2
2
.
0
MAG
|S21e|2
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.



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