2SB649_15 datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page

2of 2

Maximum Collector Dissipation

Curve

100

150

Case temperature TC (°C)

Area of Safe Operation

ICmax

(–13.3 V, –1.5 A)

(–40 V, –0.5 A)

DC Operation (TC = 25°C)

(–120 V, –0.038 A)

(–160 V, –0.02 A)

2SB649A

2SB649

–3

–1.0

–0.3

–0.1

–0.03

–0.01

–1

–3

–10

Collector to emitter voltage VCE (V)

–30

–100

–300

TC = 25°C

Typical Output Characteristics

–1.0

–0.8

–0.6

–0.4

–0.2

–10

–40

–20

IB = 0

–0.5 mA

–1.0

–1.5

–2.0

–2.5

–3.0

–3.5

–4.0

–4.5

–5.0

–30

–50

Collector to emitter voltage VCE (V)

Typical Transfer Characteristics

–500

–100

–10

–1

–0.4

Base to emitter voltage VBE (V)

–0.8

–0.2

–0.6

–1.0

VCE = –5 V

DC Current Transfer Ratio

vs. Collector Current

350

VCE = –5V

Ta = 75°C

25°C

–25°C

350

250

200

150

100

–1

–10

–100

–1,000

Collector current IC (mA)

Collector to Emitter Saturation

Voltage vs. Collector Current

IC = 10 IB

–1.2

–1.0

–0.8

–0.6

–0.4

–0.2

–0

–1

–10

Collector current IC (mA)

–100

–25

–1,000

2SB649/2SB

649A

PNP Type

Plastic Encapsulate Transistors

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

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