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ASB Inc.

 sales@asb.co.kr

July 2014

ASF133

2.4

Absolute Maximum Ratings

Parameters

Max. Ratings

Operation Case Temperature

-40 to

85 C

Storage Temperature

-40 to

150 C

Device Voltage

+6 V

Operation Junction Temperature

+150

C

Input RF Power (CW, 50

 matched)

+25 dBm

2.5

Thermal Resistance

Symbol

Description

Typ

Unit

Thermal resistance from junction to lead

110

C/W

2.6

ESD Classification & Moisture Sensitivity Level

ESD Classification

HBM

Class 1B

Voltage Level: 500 ~ 1000 V

MM

Class A

Voltage Level: <200 V

CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can

be damaged by static electricity. Proper ESD control techniques should be used when

handling these devices.

Moisture Sensitivity Level

MSL 3 at 260

C reflow

(Intentionally Blanked)