2SD1615-M datasheet(2/3 Pages) KEXIN

2 / 3 page

SMD Type

www.kexin.com.cn

Transistors

NPN Transistors

2SD1615

■

Typical Characterisitics

without he

atsink

TA – Ambient Temperature – ˚C

120

160

200

2.5

2.0

1.5

1.0

0.5

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

100

300 A

200 A

150 A

100 A

IB = 50 A

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

VCE – Collector to Emitter Voltage – V

1000

500

200

100

0.01 0.02 0.05 0.1 0.2

0.5

IC – Collector Current – A

DC CURRENT GAIN vs.

COLLECTOR CURRENT

VCE = 2.0 V

1.0

0.8

0.6

0.4

0.2

0.4

0.6

0.8

1.0

3.0 mA

2.5 mA

2.0 mA

1.5 mA

1.0 mA

IB = 0.5 mA

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

VCE(sat) – Collector Saturation Voltage – V

0.5

0.2

0.1

0.05

0.02

0.01 0.02 0.05 0.1 0.2

0.5

IC – Collector Current – A

COLLECTOR AND BASE SATURATION

VOLTAGE vs. COLLECTOR CURRENT

3.5

4.0

5.0 mA

4.5 mA

IC = 20·IB

E(s

at)

VBE(sat)

SAFE OPERATING AREA

(TRANSIENT THERMAL RESISTANCE

METHOD)

1 pulse

0.5

0.2

0.1

0.05

0.02

0.01

100

VCE – Collector to Emitter Voltage – V

200

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