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2SB1572-Z Folha de dados(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SB1572-Z
Descrição Electrónicos  PNP Transistors
PDF  3 Pages
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB1572-Z Folha de dados(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  2SB1572-Z Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SB1572-Z Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd 2SB1572-Z Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
2
Transistors
PNP Transistors
2SB1572
■
Typical Characterisitics
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
500
200
100
50
20
10
1
2
5
IC = 20 IB
.
IC - Collector Current - A
0.1
0.02 0.05
0.01
0.2
0.5
10
1
2
5
TA = 125˚C
75˚C
25˚C
0˚C
25˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
500
300
700
900
1100
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
VBE - Base to Emitter Voltage - mV
VCE = 2 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
0.1
0.02 0.05
0.01
0.2
0.5
10
1
2
5
1000
100
10
IC - Collector Current - A
VCE = 2 V
TA = 125˚C
75˚C
25˚C
0˚C
25˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0.2
0.4
0.6
0.8
1.0
2.0
1.6
1.2
0.8
0.4
IB =
10 mA
20 mA
30 mA
40 mA
VCE - Collector to Emitter Voltage - V
FORWARD BIAS SAFE OPERATING AREA
5
2
1
10
100
20
50
10
2
5
1
0.5
0.2
0.1
VCE - Collector to Emitter Voltage - V
TA = 25˚C
Single Pulse
100
ms
DC
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TA - Ambient Temperature - ˚C
0
120
90
0
5
1
0
3
60
100
80
40
60
20



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