MMBT4401 datasheet(1/2 Pages) MAKOSEMI

Nome de Peças	MMBT4401

Descrição Electrónicos	Plastic-Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Página de início	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Switching transistor

Marking:2X

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

40

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current -Continuous

I

C

600

mA

Collector Power Dissipation

PC

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 100μA, IE=0

60

V

Collector-emitter breakdown voltage

VCEO

IC= 1mA, IB=0

40

V

Emitter-base breakdown voltage

VEBO

IE= 100μA, IC=0

6

V

Collector cut-off current

ICB

O

VCB=50 V, IE=0

0.1

μA

Collector cut-off current

ICE

O

VCE=30 V, IB=0

0.1

μA

Emitter cut-off current

IEB

O

VEB=5V, IC=0

0.1

μA

DC current gain

hF

E

VCE=1V, IC=150mA

100

300

Collector-emitter saturation voltage

VCE(sat) IC=150mA, IB=15mA

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC= 150mA, IB=15mA

0.95

V

Transition frequency

fT

VCE= 10V, IC= 20mA

f = 100MHz

250

MHz

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MMBT4401

MAKO Semiconductor Co., Limited

4008-378-873

http://www.makosemi.hk/

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