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28F008SA-L Folha de dados(PDF) 21 Page - Intel Corporation

Nome de Peças 28F008SA-L
Descrição Electrónicos  8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY
PDF  28 Pages
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Fabricante Electrônico  INTEL [Intel Corporation]
Página de início  http://www.intel.com
Logo INTEL - Intel Corporation

28F008SA-L Folha de dados(HTML) 21 Page - Intel Corporation

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28F008SA-L
DC CHARACTERISTICS (Continued) VCC e 50V g10%
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
VPPH
VPP during EraseWrite
114
120
126
V
Operations
VLKO
VCC EraseWrite Lock
20
V
Voltage
NOTES
1 All currents are in RMS unless otherwise noted Typical values at VCC e 50V VPP e 120V T e 25 C These currents
are valid for all product versions (packages and speeds)
2 ICCES is specified with the device deselected If the 28F008SA-L is read while in Erase Suspend Mode current draw is
the sum of ICCES and ICCR
3 Includes RYBY
4 Block ErasesByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL
AC INPUTOUTPUT REFERENCE WAVEFORM
290435 – 7
AC test inputs are driven at 30V for a Logic ‘‘1’’ and 00V for a Logic ‘‘0’’ Input timing
begins and output timing ends at 15V Input rise and fall times (10% to 90%) k 10 ns
AC TESTING LOAD CIRCUIT(2)
CL e 50 pF
CL Includes Jig
290435 – 8
Capacitance
RL e 33 kX
AC CHARACTERISTICSRead-Only Operations(1) VCC e 33V g03V 50V g10%
Versions
28F008SA-150
Unit
Symbol
Parameter
Notes
Min
Max
tAVAV
tRC
Read Cycle Time
150
ns
tAVQV
tACC
Address to Output Delay
150
ns
tELQV
tCE
CE
to Output Delay
2
150
ns
tPHQV
tPWH
RP
High to Output Delay
600
ns
tGLQV
tOE
OE
to Output Delay
2
75
ns
tELQX
tLZ
CE
to Output Low Z
3
0
ns
tEHQZ
tHZ
CE
High to Output High Z
3
55
ns
tGLQX
tOLZ
OE
to Output Low Z
3
0
ns
tGHQZ
tDF
OE
High to Output High Z
3
30
ns
tOH
Output Hold from Addresses CE
or OE
30
ns
Change Whichever is First
NOTES
1 See AC InputOutput Reference Waveform for timing measurements
2 OE
may be delayed up to tCE–tOE after the falling edge of CE
without impact on tCE
3 Sampled not 100% tested
21



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