HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. :Preliminary Data

Issued Date : 1998.02.01

Revised Date : 1999.08.01

Page No. : 1/2

HSMC Product Specification

DB3

TRIGGER DIODES (Package DO-35)

Description

High reliability glass passivation insuring parameter stability and against contamination.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -40 ~ +125

°C

Junction Temperature ........................................................................................... -40 ~ +110

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 150 mW

• Maximum Voltages and Currents

Breakover Voltage .............................................................................................................. 32 V

Breakover Voltage symmetry ..............................................................................................

±3 V

Repetitive peak on-state Current .......................................................................................... 2 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

VBO

28

32

36

V

C=22nF

[ |+VBO| ]-[ |-VBO| ]

-

-

±3

V

C=22nF

IV±I

5

-

-

V

I=[ IBO to IF=10mA ]

VO

5

-

-

V

IBO

-

-

50

uA

C=22nF

tr

-

1.5

-

uS

IB

-

-

10

uA

VB=0.5 VBO max

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%