MSA-1100 datasheet(2/4 Pages) HP

2 / 4 page

6-451

MSA-1100 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current

100 mA

Power Dissipation[2,3]

650 mW

RF Input Power

+13dBm

Junction Temperature

200

°C

Storage Temperature

–65 to 200

°C

Thermal Resistance[2,4]:

[2] = 57

°C/W

Part Number Ordering Information

Part Number

Devices Per Tray

MSA-1100-GP4

100

Power Gain (|S21| 2)

f = 0.1 GHz

12.5

∆GP

Gain Flatness

f = 0.1 to 1.0 GHz

± 0.7

f3 dB

3 dB Bandwidth[3]

GHz

1.6

Input VSWR

f = 0.1 to 1.0 GHz

1.7:1

Output VSWR

f = 0.1 to 1.0 GHz

1.9:1

Ω Noise Figure

f = 0.5 GHz

3.5

P1 dB

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

17.5

IP3

Third Order Intercept Point

f = 0.5 GHz

dBm

30.0

Group Delay

f = 0.5 GHz

psec

125

Device Voltage

4.5

5.5

6.5

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

–8.0

Notes:

1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current

is on the following page.

2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.

3. Referenced from 0.05 GHz gain (GP).

Electrical Specifications[1], T

A = 25°C

Symbol

Parameters and Test Conditions[2]: I

d = 60 mA, ZO = 50 Ω

Units

Min.

Typ.

Max.

VSWR

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TMounting Surface (TMS)= 25°C.

3. Derate at 17.5 mW/

°C for T

Mounting Surface > 163°C.

4. The small spot size of this technique results in a higher, though more

accurate determination of

jc than do alternate methods.

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