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HMMC-5618 Folha de dados(PDF) 3 Page - Agilent(Hewlett-Packard) |
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HMMC-5618 Folha de dados(HTML) 3 Page - Agilent(Hewlett-Packard) |
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3 / 6 page  6-66 HMMC-5618 Applications The HMMC-5618 is a GaAs MMIC amplifier designed for optimum Class-A efficiency and flat gain performance from 6 GHz to 20 GHz. It has applications as a cascadable gain stage for EW amplifiers, buffer stages, LO drives, phased-array radar, and transmitter amplifiers used in commercial communication systems. The MMIC solution is a cost effective alternative to hybrid assemblies. Biasing and Operation The MMIC amplifier is normally biased with a single positive drain supply connected to both VD1 and VD2 bond pads as shown in Figure 8a. The recommended drain supply voltage is 3 to 5 volts. If desired, the first stage drain bonding pad can be biased separately to provide a small amount of gain slope control or bandwidth extension as demon- strated in Figure 2. No ground wires are required because all ground connections are made with plated through- holes to the backside of the device. Gate bias pads (VG1 and VG2) are also provided to allow adjust- ments in gain, RF output power, and DC power dissipation, if necessary. No connection to the gate pads is needed for single drain-bias operation. However, for custom applications, the DC current flowing through the input and/or output gain stage may be adjusted by applying a voltage to the gate bias pad(s) as shown in Figure 8b. A negative gate-pad voltage will decrease the drain current. The gate-pad voltage is approximately zero volts during operation with no DC gate supply. Refer to the Absolute Maximum Ratings table for allowed DC and thermal conditions. Assembly Techniques Solder die attach using a fluxless gold-tin (AuSn) solder preform is the recommended assembly method. A conductive epoxy such as ABLEBOND® 71-1LM1 or ABLEBOND® 36-2 may also be used for die attaching provided the Maximum Thermal Ratings are not exceeded. The device should be attached to an electri- cally conductive surface to complete the DC and RF ground paths. The backside metallization on the device is gold. It is recommended that the RF input, RF output, and DC supply connections be made using 0.7 mil diameter gold wire. The device has been designed so that optimum performance is realized when the RF input and RF output bond-wire inductance is approxi- mately 0.2 nH as demonstrated in Figures 4, 6, and 7. Therefore, mesh or multiple-wire bonds are not necessary. It is, however, recommended that the RF wires be as short as possible to mini- mize assembly related perfor- mance variations. Thermosonic wedge is the preferred method for wire bonding to the gold bond pads. Wires can be attached using a guided-wedge at an ultrasonic power level of roughly 64 dB for a duration of 76 ± 8 msec with a stage temperature of 150 ± 2°C. For more detailed information see HP application note #999 “GaAs MMIC Assembly and Handling Guidelines.” GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. Figure 1. HMMC-5618 Simplified Schematic. IN VG1 VG2 2K Ω 2KΩ 2K Ω 1KΩ OUT MATCHING MATCHING FEEDBACK NETWORK MATCHING VD1 VD2 |
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