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STPSC4H065D Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STPSC4H065D
Descrição Electrónicos  650 V power Schottky silicon carbide diode
PDF  10 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC4H065D Folha de dados(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
November 2013
DocID023598 Rev 3
1/10
STPSC4H065
650 V power Schottky silicon carbide diode
Datasheet
- production data
Features
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 High forward surge capability
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
K
K
A
K
A
NC
K
A
TO-220AC
STPSC4H065D
DPAK
STPSC4H065B-TR
Table 1. Device summary
Symbol
Value
IF(AV)
4 A
VRRM
650 V
Tj (max)
175 °C
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