IXTY1N100P datasheet(4/4 Pages) IXYS

Nome de Peças	IXTY1N100P

Descrição Electrónicos	Polar Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	IXYS [IXYS Corporation]

Página de início	http://www.ixys.com

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4 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA1N100P IXTP1N100P

IXTY1N100P

IXYS REF: T_1N100P(1C)4-03-08-A

Fig. 7. Input Admittance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

ID - Amperes

TJ = - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 500V

I D = 0.5A

I G = 10mA

Fig. 11. Capacitance

100

1,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.1

1.0

10.0

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

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